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SI1317DL-T1-GE3
Power MOSFET, P Channel, 20 V, 1.4 A, 0.125 ohm, SOT-323, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £0.152 |
| 500+ | £0.142 |
| 1500+ | £0.126 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1317DL-T1-GE3
Order Code2056676RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.4A
Drain Source On State Resistance0.125ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1317DL-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- -50 to 150°C Operating temperature range
- Halogen-free
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005
Product traceability