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SI1317DL-T1-GE3
Power MOSFET, P Channel, 20 V, 1.4 A, 0.125 ohm, SOT-323, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | £0.0836 |
| 9000+ | £0.0823 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
£250.80 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1317DL-T1-GE3
Order Code4320182
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.4A
Drain Source On State Resistance0.125ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005
Product traceability