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SCT2H12NYTB
Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
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No Longer Manufactured
Product Information
ManufacturerROHM
Manufacturer Part NoSCT2H12NYTB
Order Code2762593
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance1.15ohm
Transistor Case StyleTO-268 (D3PAK)
No. of Pins2Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation44W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
4A
Drain Source On State Resistance
1.15ohm
No. of Pins
2Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
TO-268 (D3PAK)
Rds(on) Test Voltage
18V
Power Dissipation
44W
Product Range
-
SVHC
To Be Advised
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004695
Product traceability