Silicon Carbide (SiC) MOSFETs & Modules

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IGBT Configuration MOSFET Configuration Transistor Polarity DC Collector Current Continuous Drain Current Id Collector Emitter Saturation Voltage Vce(on) Drain Source Voltage Vds On Resistance Rds(on) Junction Temperature Tj Max Collector Emitter Voltage V(br)ceo Transistor Case Style Transistor Mounting Rds(on) Test Voltage Vgs IGBT Termination No. of Pins Threshold Voltage Vgs Power Dissipation Pd IGBT Technology Operating Temperature Max Product Range
 
 
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C2M0080120D
C2M0080120D - Silicon Carbide MOSFET, Single, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, TO-247

2361496

Silicon Carbide MOSFET, Single, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, TO-247

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- Single N Channel - 31.6A - 1.2kV 0.08ohm - - TO-247 Through Hole 20V - 3Pins 3.2V 208W - 150°C -
C2M1000170D
C2M1000170D - Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247

2361497

Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247

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- Single N Channel - 4.9A - 1.7kV 0.95ohm - - TO-247 Through Hole 20V - 3Pins 2.4V 69W - 150°C -
CAS300M17BM2
CAS300M17BM2 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 325 A, 1.7 kV, 0.008 ohm, Module

2449318

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 325 A, 1.7 kV, 0.008 ohm, Module

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- Half Bridge Dual N Channel - 325A - 1.7kV 0.008ohm - - Module - 20V - 7Pins 2.3V 1.76kW - 150°C -
SCT30N120
SCT30N120 - Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.08 ohm, HiP247

2451116

Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.08 ohm, HiP247

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- Single N Channel - 40A - 1.2kV 0.08ohm - - HiP247 Through Hole 20V - 3Pins 2.6V 270W - 200°C -
C3M0075120J
C3M0075120J - Silicon Carbide MOSFET, Single, N Channel, 30 A, 1.2 kV, 0.075 ohm, TO-263 (D2PAK)

2773496

Silicon Carbide MOSFET, Single, N Channel, 30 A, 1.2 kV, 0.075 ohm, TO-263 (D2PAK)

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- Single N Channel - 30A - 1.2kV 0.075ohm - - TO-263 (D2PAK) Surface Mount 15V - 7Pins 2V 113.6W - 150°C -
SCT20N120
SCT20N120 - Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247

2807234

Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 0.169 ohm, HiP247

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- Single N Channel - 20A - 1.2kV 0.169ohm - - HiP247 Through Hole 20V - 3Pins 3.5V 175W - 200°C -
C3M0120090D
C3M0120090D - Silicon Carbide MOSFET, Single, N Channel, 23 A, 900 V, 0.12 ohm, TO-247

2630825

Silicon Carbide MOSFET, Single, N Channel, 23 A, 900 V, 0.12 ohm, TO-247

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- Single N Channel - 23A - 900V 0.12ohm - - TO-247 Through Hole 15V - 3Pins 2.1V 97W - 150°C C2M
C2M0160120D
C2M0160120D - Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247

2630830

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247

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- Single N Channel - 19A - 1.2kV 0.16ohm - - TO-247 Through Hole 20V - 3Pins 2.6V 125W - 150°C C2M
C2M1000170J
C2M1000170J - Silicon Carbide MOSFET, Single, N Channel, 5.3 A, 1.7 kV, 1 ohm, TO-263 (D2PAK)

2630824

Silicon Carbide MOSFET, Single, N Channel, 5.3 A, 1.7 kV, 1 ohm, TO-263 (D2PAK)

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- Single N Channel - 5.3A - 1.7kV 1ohm - - TO-263 (D2PAK) Surface Mount 20V - 7Pins 2.6V 78W - 150°C C2M
NTH4L040N120SC1
NTH4L040N120SC1 - Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247

3464004

Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.04 ohm, TO-247

ONSEMI

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- Single N Channel - 58A - 1.2kV 0.04ohm - - TO-247 Through Hole 20V - 4Pins 3V 319W - 175°C -
SCTW60N120G2
SCTW60N120G2 - Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.035 ohm, HiP247

3879171

Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.035 ohm, HiP247

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- Single N Channel - 60A - 1.2kV 0.035ohm - - HiP247 - 18V - 3Pins 3V 389W - 200°C -
C2M0025120D
C2M0025120D - Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.025 ohm, TO-247

2422213

Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.025 ohm, TO-247

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C2M0045170D
C2M0045170D - Silicon Carbide MOSFET, Single, N Channel, 72 A, 1.7 kV, 0.045 ohm, TO-247

2630835

Silicon Carbide MOSFET, Single, N Channel, 72 A, 1.7 kV, 0.045 ohm, TO-247

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- Single N Channel - 72A - 1.7kV 0.045ohm - - TO-247 Through Hole 20V - 3Pins 2.6V 520W - 150°C C2M
C3M0065090J
C3M0065090J - Silicon Carbide MOSFET, Single, N Channel, 35 A, 900 V, 0.065 ohm, TO-263 (D2PAK)

2630833

Silicon Carbide MOSFET, Single, N Channel, 35 A, 900 V, 0.065 ohm, TO-263 (D2PAK)

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- Single N Channel - 35A - 900V 0.065ohm - - TO-263 (D2PAK) Surface Mount 15V - 7Pins 2.1V 113W - 150°C -
C2M0280120D
C2M0280120D - Silicon Carbide MOSFET, Single, N Channel, 10 A, 1.2 kV, 0.28 ohm, TO-247

2630831

Silicon Carbide MOSFET, Single, N Channel, 10 A, 1.2 kV, 0.28 ohm, TO-247

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- Single N Channel - 10A - 1.2kV 0.28ohm - - TO-247 Through Hole 20V - 3Pins 2.8V 62.5W - 150°C -
SCT3080KLGC11
SCT3080KLGC11 - Silicon Carbide Power MOSFET, N Channel, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V

2680148

Silicon Carbide Power MOSFET, N Channel, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V

ROHM

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- Single N Channel - 31A - 1.2kV 0.08ohm - - TO-247N Through Hole 18V - 3Pins 5.6V 165W - 175°C -
SCT50N120
SCT50N120 - Silicon Carbide MOSFET, Single, N Channel, 65 A, 1.2 kV, 0.052 ohm, HiP247

2849642

Silicon Carbide MOSFET, Single, N Channel, 65 A, 1.2 kV, 0.052 ohm, HiP247

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- Single N Channel - 65A - 1.2kV 0.052ohm - - HiP247 Through Hole 20V - 3Pins 3V 318W - 200°C -
C3M0120100K
C3M0120100K - Silicon Carbide MOSFET, Single, N Channel, 22 A, 1 kV, 0.12 ohm, TO-247

2687504

Silicon Carbide MOSFET, Single, N Channel, 22 A, 1 kV, 0.12 ohm, TO-247

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- Single N Channel - 22A - 1kV 0.12ohm - - TO-247 Through Hole 15V - 4Pins 2.1V 83W - 150°C C3M
C3M0065090D
C3M0065090D - Silicon Carbide MOSFET, Single, N Channel, 36 A, 900 V, 0.065 ohm, TO-247

2630832

Silicon Carbide MOSFET, Single, N Channel, 36 A, 900 V, 0.065 ohm, TO-247

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- Single N Channel - 36A - 900V 0.065ohm - - TO-247 Through Hole 15V - 3Pins 2.1V 125W - 150°C -
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 - Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 100 A, 1.2 kV, 0.011 ohm, Module

2771412

Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 100 A, 1.2 kV, 0.011 ohm, Module

INFINEON

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- Half Bridge N Channel - 100A - 1.2kV 0.011ohm - - Module - - - - 4.5V 20mW - 150°C CoolSic
SCT2H12NZGC11
SCT2H12NZGC11 - Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

2531101

Silicon Carbide Power MOSFET, N Channel, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

ROHM

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- Single N Channel - 3.7A - 1.7kV 1.15ohm - - TO-3PFM Through Hole 18V - 3Pins 2.8V 35W - 175°C -
C3M0030090K
C3M0030090K - Silicon Carbide MOSFET, Single, N Channel, 63 A, 900 V, 0.03 ohm, TO-247

2843640

Silicon Carbide MOSFET, Single, N Channel, 63 A, 900 V, 0.03 ohm, TO-247

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- Single N Channel - 63A - 900V 0.03ohm - - TO-247 Through Hole 15V - 4Pins 2.4V 149W - 150°C C3M
SCT2750NYTB
SCT2750NYTB - Silicon Carbide Power MOSFET, N Channel, 6 A, 1.7 kV, 0.75 ohm, 18 V, 2.8 V

2772413

Silicon Carbide Power MOSFET, N Channel, 6 A, 1.7 kV, 0.75 ohm, 18 V, 2.8 V

ROHM

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- Single N Channel - 6A - 1.7kV 0.75ohm - - TO-268 (D3PAK) Surface Mount 18V - 2Pins 2.8V 57W - 175°C -
C3M0280090D
C3M0280090D - Silicon Carbide MOSFET, Single, N Channel, 11.5 A, 900 V, 0.28 ohm, TO-247

2630827

Silicon Carbide MOSFET, Single, N Channel, 11.5 A, 900 V, 0.28 ohm, TO-247

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- Single N Channel - 11.5A - 900V 0.28ohm - - TO-247 Through Hole 15V - 3Pins 2.1V 54W - 150°C C2M
C2M0040120D
C2M0040120D - Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.04 ohm, TO-247

2630829

Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.04 ohm, TO-247

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- Single N Channel - 60A - 1.2kV 0.04ohm - - TO-247 Through Hole 20V - 3Pins 2.6V 330W - 150°C C2M