Print Page
NVBG020N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG020N120SC1
Order Code3265484
Product RangeEliteSiC Series
Technical Datasheet
717 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £38.750 |
| 5+ | £34.880 |
| 10+ | £27.050 |
| 50+ | £26.980 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
£38.75 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG020N120SC1
Order Code3265484
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id98A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.7V
Power Dissipation468W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (27-Jun-2024)
Product Overview
NVBG020N120SC1 is a silicon carbide (SiC) MOSFET. Typical applications are automotive on board charger, automotive DC-DC converter for EV/HEV.
- AEC-Q101 qualified and PPAP capable
- 100% avalanche tested
- Low effective output capacitance (typ. Coss= 258pF)
- Drain-to-source voltage is 1200V at TJ = 25°C
- Continuous drain current is 98A at TC = 25°C
- Power dissipation is 3.7W at TC = 25°C
- Single pulse surge drain current capability is 807A at TA = 25°C, tp = 10µs, RG = 4.7ohm
- Operating junction and storage temperature range from -55 to +175°C
- D2PAK-7L package
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
98A
Drain Source On State Resistance
0.02ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
468W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000024
Product traceability