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SCT2160KEGC11
Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-247N
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £11.760 |
| 5+ | £10.670 |
| 10+ | £9.570 |
| 50+ | £9.380 |
| 100+ | £9.190 |
| 250+ | £9.000 |
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£11.76 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT2160KEGC11
Order Code3757548
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id22A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation165W
Operating Temperature Max175°C
Product Range-
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
22A
Drain Source On State Resistance
0.16ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation
165W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006421
Product traceability