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IPW50R299CP
Power MOSFET, N Channel, 550 V, 12 A, 0.299 ohm, TO-247, Through Hole
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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW50R299CP
Order Code1664080
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id12A
Drain Source On State Resistance0.299ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation104W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.299ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542