IGLD60R070D1AUMA1
Gallium Nitride (GaN) Transistor, 600 V, 15 A, 0.055 ohm, 5.8 nC, PG-LSON-8-1, Surface Mount
Product Information
Product Overview
Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
600V
0.055ohm
5.8nC
Surface Mount
CoolGaN
No SVHC (27-Jun-2018)
15A
0.055ohm
PG-LSON-8-1
8Pins
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate