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FF45MR12W1M1B11BOMA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 25 A, 1.2 kV, 0.045 ohm, Module
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF45MR12W1M1B11BOMA1
Order Code3267807
Product RangeEasyDUAL
Also Known AsFF45MR12W1M1_B11, SP001726338
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id25A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.045ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyDUAL
SVHCNo SVHC (27-Jun-2018)
Product Overview
Applications
Medical
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.045ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
EasyDUAL
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01