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DIW120SIC028
Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.0274 ohm, TO-247
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £69.290 |
| 5+ | £61.730 |
| 10+ | £54.170 |
| 50+ | £53.090 |
| 100+ | £52.000 |
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Multiple: 1
£69.29 (ex VAT)
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Product Information
ManufacturerDIOTEC
Manufacturer Part NoDIW120SIC028
Order Code4680842
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0274ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation517W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0274ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
517W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability