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PHE13003A,412
Bipolar (BJT) Single Transistor, NPN, 400 V, 1 A, 2.1 W, SOT-54, Through Hole
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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13003A,412
Order Code1859370
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHE13003A,412
Order Code1859370
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current1A
Power Dissipation2.1W
Transistor Case StyleSOT-54
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min7.5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1A
Transistor Case Style
SOT-54
No. of Pins
3Pins
DC Current Gain hFE Min
7.5hFE
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Collector Emitter Voltage Max
400V
Power Dissipation
2.1W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000231