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SUD19P06-60-GE3
Power MOSFET, P Channel, 60 V, 18.3 A, 0.06 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.813 |
| 50+ | £0.658 |
| 100+ | £0.577 |
| 500+ | £0.488 |
| 1000+ | £0.445 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD19P06-60-GE3
Order Code2101465
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18.3A
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation38.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The SUD19P06-60-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Suitable for DC/DC converters and power switch applications.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18.3A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
38.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000563