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SQJ469EP-T1-GE3
Power MOSFET, P Channel, 80 V, 32 A, 0.021 ohm, PowerPAK SO, Surface Mount
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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ469EP-T1-GE3
Order Code1869926
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id32A
Drain Source On State Resistance0.021ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation100W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
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Product Overview
The SQJ469EP-T1-GE3 is a -80V P-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
- 100% Rg Tested
- 100% UIS Tested
- 800V ESD protection
- 175°C Operating temperature
Applications
Automotive
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
32A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
6 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000172