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SQD50N04-09H-GE3
Power MOSFET, N Channel, 40 V, 50 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD50N04-09H-GE3
Order Code1869916
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0068ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003