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SQD19P06-60L-GE3
Power MOSFET, P Channel, 60 V, 20 A, 0.046 ohm, TO-252 (DPAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD19P06-60L-GE3
Order Code1869904
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id20A
Drain Source On State Resistance0.046ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation46W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
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Product Overview
The SQD19P06-60L-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature and low thermal resistance.
- AEC-Q101 Qualified
- 100% Rg Tested
- 100% UIS Tested
Applications
Automotive
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
46W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.046ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000605