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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ7414EN-T1-E3
Order Code1869901
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.7A
Drain Source On State Resistance0.021ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The SQ7414EN-T1-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- AEC-Q101 qualified
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Halogen-free
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.7A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
3.8W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002