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SQ4942EY-T1-GE3
Power MOSFET, N Channel, 40 V, 8 A, 0.016 ohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4942EY-T1-GE3
Order Code1869898
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id8A
Drain Source On State Resistance0.016ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation4.4W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2014)
Product Overview
The SQ4942EY-T1-GE3 is a 40VDS dual TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- AEC-Q101 qualified
- Halogen-free
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.4W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2014)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2014)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability