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SQ4920EY-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.013 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4920EY-T1-GE3
Order Code2364112
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel0.013ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel4.4W
Power Dissipation P Channel4.4W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Product Overview
Applications
Automotive
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.013ohm
No. of Pins
8Pins
Power Dissipation P Channel
4.4W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.013ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
4.4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012