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SQ4431EY-T1-GE3
Power MOSFET, P Channel, 30 V, 10.8 A, 0.03 ohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4431EY-T1-GE3
Order Code1869893
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10.8A
Drain Source On State Resistance0.03ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
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Product Overview
The SQ4431EY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- AEC-Q101 qualified
- Halogen-free
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management, Automotive
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
10.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
6W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005