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SQ3419EEV-T1-GE3
Power MOSFET, P Channel, 40 V, 7.4 A, 0.05 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ3419EEV-T1-GE3
Order Code2364108
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id7.4A
Drain Source On State Resistance0.05ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation5W
No. of Pins6Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Product Overview
The SQ3419EEV-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- AEC-Q101 qualified
- 800V ESD protection
- Halogen-free
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management, Automotive
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
7.4A
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
6Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033