Print Page
SQ2361ES-T1_GE3
Power MOSFET, P Channel, 60 V, 2.8 A, 0.13 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ2361ES-T1_GE3
Order Code4320251
Product RangeTrenchFET Series
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ2361ES-T1_GE3
Order Code4320251
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.8A
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCTo Be Advised
Alternatives for SQ2361ES-T1_GE3
1 Product Found
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.025
Product traceability