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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ2361EES-T1-GE3
Order Code2396096RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.15ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000038