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SIZ920DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 40 A, 40 A, 0.0059 ohm
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ920DT-T1-GE3
Order Code2283688
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel0.0059ohm
Drain Source On State Resistance P Channel0.0059ohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel100W
Power Dissipation P Channel100W
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SIZ920DT-T1-GE3
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance P Channel
0.0059ohm
No. of Pins
8Pins
Power Dissipation P Channel
100W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
0.0059ohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
100W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012
Product traceability