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SIZ900DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 24 A, 24 A, 0.0059 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ900DT-T1-GE3
Order Code2056731
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel24A
Continuous Drain Current Id P Channel24A
Drain Source On State Resistance N Channel0.0059ohm
Drain Source On State Resistance P Channel0.0059ohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SIZ900DT-T1-GE3
1 Product Found
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
24A
Drain Source On State Resistance P Channel
0.0059ohm
No. of Pins
8Pins
Power Dissipation P Channel
48W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
24A
Drain Source On State Resistance N Channel
0.0059ohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
48W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002