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SISS27ADN-T1-GE3
Power MOSFET, P Channel, 30 V, 50 A, 0.0042 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSISS27ADN-T1-GE3
Order Code3772845RL
Product RangeTrenchFET Gen III
Technical Datasheet
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| 100+ | £0.424 |
| 500+ | £0.325 |
| 1000+ | £0.292 |
| 5000+ | £0.247 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS27ADN-T1-GE3
Order Code3772845RL
Product RangeTrenchFET Gen III
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0042ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
50A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen III
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability