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SIS890DN-T1-GE3
Power MOSFET, N Channel, 100 V, 30 A, 0.0235 ohm, PowerPAK 1212, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 33 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | £0.439 |
| 9000+ | £0.427 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
£1,317.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS890DN-T1-GE3
Order Code4320196
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0235ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0235ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability