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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS862DN-T1-GE3
Order Code2400398
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id40A
Drain Source On State Resistance0.007ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
The SIS862DN-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch, synchronous rectification, DC-to-DC converter, boost converter and DC-to-AC inverters applications.
- 100% Rg tested
- 100% UIS tested
- Capable of operating with 5V gate drive
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Communications & Networking
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000076
Product traceability