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SIS4608DN-T1-GE3
Power MOSFET, N Channel, 60 V, 35.7 A, 0.0099 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIS4608DN-T1-GE3
Order Code4014725
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS4608DN-T1-GE3
Order Code4014725
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id35.7A
Drain Source On State Resistance0.0099ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation27.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35.7A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
27.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0099ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363
Product traceability