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SIRC18DP-T1-GE3
Power MOSFET, N Channel, 30 V, 60 A, 850 µohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIRC18DP-T1-GE3
Order Code2846632
Product RangeTrenchFET Gen IV
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRC18DP-T1-GE3
Order Code2846632
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source On State Resistance850µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation54.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCTo Be Advised
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
54.3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
850µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074
Product traceability