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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA00DP-T1-GE3
Order Code2114701
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source On State Resistance830µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.1V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The SIRA00DP-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, O-ring, high power density DC-to-DC, VRMs and embedded DC-to-DC applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
830µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000157
Product traceability