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SIR890DP-T1-GE3
Power MOSFET, N Channel, 20 V, 50 A, 0.0029 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR890DP-T1-GE3
Order Code1684063
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0029ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SIR890DP-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for low-side device in synchronous buck DC-to-DC converter applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
SOIC
Rds(on) Test Voltage
20V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000225