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SIR418DP-T1-GE3
Power MOSFET, N Channel, 40 V, 40 A, 0.00415 ohm, PowerPAK SO, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR418DP-T1-GE3
Order Code2101462RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id40A
Drain Source On State Resistance0.00415ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Dec-2014)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2014)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.00415ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2014)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000155
Product traceability