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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR186DP-T1-RE3
Order Code2785448
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0037ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCLead (07-Nov-2024)
Product Overview
N-channel 60V (D-S) MOSFET suitable for use in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qi figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100% Rg and UIS tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0037ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
8Pins
Product Range
TrenchFET
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000204
Product traceability