Print Page
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP6N40D-GE3
Order Code2283622
Product RangeD
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id6A
Drain Source On State Resistance1ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation104W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeD
Qualification-
Alternatives for SIHP6N40D-GE3
1 Product Found
Product Overview
The SIHP6N40D-GE3 is a 400V N-channel high voltage MOSFET with low area specific on-resistance and low input capacitance. This D series MOSFET is used in displays, server and telecom power supply applications.
- Reduced capacitive switching losses
- High body diode ruggedness
- Optimal efficiency and operation due to simple gate drive circuitry
- Low figure of merit Ron X Qg
- 100% Avalanche rated
Applications
Power Management, Consumer Electronics, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
400V
Drain Source On State Resistance
1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
D
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability