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SIHP18N50C-E3
Power MOSFET, N Channel, 500 V, 18 A, 0.225 ohm, TO-220, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £2.240 |
| 10+ | £1.810 |
| 100+ | £1.490 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP18N50C-E3
Order Code1869883
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id18A
Drain Source On State Resistance0.225ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation223W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2014)
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Product Overview
The SIHP18N50C-E3 is a 500VDS N-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low figure-of-merit (FOM) Ron x Qg
- 100% Avalanche tested
- High peak current capability
- dV/dt Ruggedness
- Improved trr/Qrr
- Improved gate charge
- High power dissipations capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
223W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2014)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.225ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2014)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195