Print Page
SIHP12N50C-E3
Power MOSFET, N Channel, 500 V, 12 A, 0.46 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP12N50C-E3
Order Code1858987
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id12A
Drain Source On State Resistance0.46ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SIHP12N50C-E3
2 Products Found
Product Overview
The SIHP12N50C-E3 is a 500VDS N-channel enhancement-mode Power MOSFET with antiparallel diode.
- Low figure-of-merit (FOM) Ron x Qg
- 100% Avalanche tested
- Gate charge improved
- Improved trr/Qrr
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.46ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195
Product traceability