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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH26N60E-T1-GE3
Order Code2526617
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id25A
Drain Source On State Resistance0.117ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation202W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
Alternatives for SIHH26N60E-T1-GE3
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
25A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
202W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.117ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
E
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209