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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH14N65E-T1-GE3
Order Code2576522
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id15A
Drain Source On State Resistance0.225ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation156W
No. of Pins5Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
Alternatives for SIHH14N65E-T1-GE3
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.225ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
E
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209