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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH11N60EF-T1-GE3
Order Code2576520RL
Product RangeEF
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
Drain Source On State Resistance0.357ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation114W
No. of Pins5Pins
Operating Temperature Max150°C
Product RangeEF
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
114W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.357ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
EF
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209
Product traceability