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SIHB6N65E-GE3
Power MOSFET, N Channel, 650 V, 7 A, 0.5 ohm, TO-263 (D2PAK), Surface Mount
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Manufacturer Standard Lead Time: 25 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.150 |
| 10+ | £1.010 |
| 100+ | £0.834 |
| 500+ | £0.748 |
| 1000+ | £0.690 |
| 5000+ | £0.662 |
Price for:Each
Minimum: 1
Multiple: 1
£1.15 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB6N65E-GE3
Order Code2364073
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id7A
Drain Source On State Resistance0.5ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation78W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability