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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB22N60S-E3
Order Code1794783
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id22A
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SIHB22N60S-E3
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Product Overview
The SIHB22N60S-E3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for PFC power supply stages, hard switching topologies, solar inverters, UPS, motor control and server telecom applications.
- Generation one
- High EAR capability
- Lower figure-of-merit RON x Qg
- 100% Avalanche tested
- Ultra low RON
- dV/dt Ruggedness
- Ultra low gate charge
Applications
Industrial, Power Management, Communications & Networking, Lighting, Motor Drive & Control, Alternative Energy
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.16ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0019