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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHA15N50E-E3
Order Code2471935
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id14.5A
Drain Source On State Resistance0.243ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation33W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2014)
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Product Overview
The SIHA15N50E-E3 is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (CISS)
- Reduced switching
- Reduced conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)
Applications
Industrial, Power Management, LED Lighting, Consumer Electronics, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14.5A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2014)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.243ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2014)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001538
Product traceability