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SIA436DJ-T1-GE3
Power MOSFET, N Channel, 8 V, 12 A, 0.0078 ohm, PowerPAK SC-70, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | £0.177 |
| 9000+ | £0.176 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
£531.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA436DJ-T1-GE3
Order Code4320194
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id12A
Drain Source On State Resistance0.0078ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max350mV
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
4.5V
Power Dissipation
19W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.0078ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
350mV
No. of Pins
6Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012
Product traceability