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SIA413ADJ-T1-GE3
Power MOSFET, P Channel, 12 V, 12 A, 0.024 ohm, PowerPAK SC-70, Surface Mount
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA413ADJ-T1-GE3
Order Code2400369
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id12A
Drain Source On State Resistance0.024ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max-
Power Dissipation19W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SIA413ADJ-T1-GE3
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
4.5V
Power Dissipation
19W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
6Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability