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SI8100DB-T2-E1
Power MOSFET, N Channel, 25 V, 9.5 A, 0.009 ohm, MICRO FOOT, Surface Mount
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI8100DB-T2-E1
Order Code2283662
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id9.5A
Drain Source On State Resistance0.009ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.9W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.5A
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
10V
Power Dissipation
2.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012
Product traceability