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SI7942DP-T1-E3
Dual MOSFET, N Channel, 100 V, 5.9 A, 0.041 ohm
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7942DP-T1-E3
Order Code1684079
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.9A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.041ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
5.9A
Drain Source On State Resistance N Channel
0.041ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004