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SI7852ADP-T1-E3
Power MOSFET, N Channel, 80 V, 30 A, 0.017 ohm, PowerPAK SO, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7852ADP-T1-E3
Order Code1684065
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id30A
Drain Source On State Resistance0.017ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation62.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7852ADP-T1-E3 is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004