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SI7772DP-T1-GE3
Power MOSFET, N Channel, 30 V, 35.6 A, 0.013 ohm, PowerPAK SO, Surface Mount
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7772DP-T1-GE3
Order Code1858978
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35.6A
Drain Source On State Resistance0.013ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation3.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
35.6A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
3.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002