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SI7611DN-T1-GE3
Power MOSFET, P Channel, 40 V, 18 A, 0.025 ohm, PowerPAK 1212, Surface Mount
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7611DN-T1-GE3
Order Code2335367
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id18A
Drain Source On State Resistance0.025ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Power Dissipation3.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7611DN-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- Halogen-free
- -50 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
3.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005