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SI7491DP-T1-E3
Power MOSFET, P Channel, 30 V, 11 A, 0.0085 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7491DP-T1-E3
Order Code2335365
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11A
Drain Source On State Resistance0.0085ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7491DP-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for battery and load switching applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001